fred ultrafast soft recovery diode, 2 x 30 a features ultrafast recovery ultrasoft recovery very low i rrm very low q rr specified at operating conditions designed and qualified for industrial level benefits reduced rfi and emi reduced power loss in diode and switching transistor higher frequency operation reduced snubbing reduced parts count description product summary v r 600 v v f at a at c 30 25 i f av ( ) 2 30 x a ( ) t typical rr ( ) t maximum j ( ) q typical rr ( ) l typical rrm N-HFA60PA60C n high power products ell semiconductor rohs rohs semiconductor rohs rohs page 1 of 5 hfa60pa60c is a state of the art center tap ultrafast recovery diode. employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. with basic ratings of 600v and 20 a per leg continuous current, the hfa60pa60c is especially well suited for use as the companion diode for igbts and mosfets. in addition to ultrafast recovery time, the fred product line features extremely low values of peak recovery current (i rrm ) and does not exhibit any tendency to snap-off during the t b portion of recovery. the fred features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. these fred advantages can help to significantly reduce snubbing, component count and heatsink sizes. the fred hfa60pa60c is ideally suited for applications in power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. common cathode common cathode 2 2 1 3 anode 1 anode 2 to-247 ab 1.4 v 150 c 23 ns 3.0 a 55 nc absolute maximum ratings parameter symbol test conditions values units cathode to anode voltage 600 maximum continuous forward current per leg i f 30 a per device 60 single pulse forward current 320 operating junction and storage temperature range - 55 + 150 to = 100 t c oc oc v r l fsm t , t j stg v www.nellsemi.com
thermal mechanical specifications per leg - parameter symbol test conditions min typ max units . . . lead temperature t lead 0.063'' (1.6 ) 10 - - 300 from case mm for s junction to case, single leg conduction r thjc - - k w / junction to case, both legs conducting - - thermal resistance, junction to ambient r thja - - 60 typical socket mount thermal resistance, case to heatsink r thcs mounting surface flat smooth and greased , , - 0.4 - weight - 6.0 - g - 0.21 - . oz mounting torque 6.0 (5.0) - 12 (10) kgf cm . ( . ) lbf in marking device case style to-247 ( ) ab jedec n high power products ell semiconductor rohs rohs semiconductor rohs rohs page 2 of 5 N-HFA60PA60C hfa6 pa6 c 0 0 c ) oc unless otherwise specified = 25 parameter symbol v - = 60 a i f - - a - - 600 1.1 100 -- pf 36 electrical specifications ( t j cathode to anode breakdown voltage v br = 100 a i r maximum forward voltage = 30 a i f = 30 ,a t i oc f j = 125 maximum reverse leakage current i rm junction capacitance 1.4 1.5 - - ) oc unless otherwise specified = 25 parameter symbol ns - - 30 95 dynamic recovery characteristics perleg ( t j reverse recovery time i f = 1.0 a, di /dt = -100 a/s, v =30 v, t = 25 c f r j 23 - a - 6 3 - nc - 485 55 - peak recovery current reverse recovery charge t rr t rr1 t rr2 i rrm1 i rrm2 q rr1 q rr2 t oc j = 125 t oc j = 125 t oc j = 125 t oc j = 25 t oc j = 25 t oc j = 25 i a f = 30 di /dt = -200 a/s f v = 400 v r - v fm c t v v r = 150 t c, v = v rated j r r = 125 v = v rated r r i = 0.5a, i = 1.0a, i = 250ma (rg#1 ckt) f rr r 30 - 1.7 units max . typ . min . units max . typ . min . 500 - 50 35 test conditions test conditions 0.8 0.4 -- - - - - - www.nellsemi.com 1.8 2.0
n high power products ell semiconductor rohs rohs semiconductor rohs rohs page 3 of 5 N-HFA60PA60C fig.2 forward current vs. forward voltage fig.3 reverse recovery time vs. current rate of change (a) (ns) fig.1 maximum effective transient thermal impedance, junction-t o-case vs. pulse duration rectangular pulse duration (seconds) thermal impedance(c/w), z jc anode-to-cathode voltage (v), v f current rate of change(a/ ), -di /dt s f forward current, i f reverse recovery time, t rr fig.4 reverse recovery charge vs. current rate of change fig 5. reverse recovery current vs. current rate of change (nc) (a) 0 current rate of change (a/ s), -di /dt f current rate of change (a/ s), -di /dt f reverse recovery charge, q rr reverse recovery current, i rrm 600 800 400 1200 200 1000 2.2 1.4 1.0 0.8 0.5 0 0 1200 1000 800 600 400 200 0 600 800 400 1200 200 1000 0.70 0.60 0.50 0.40 0.30 0.20 0.10 0 10 -5 10 -3 10 -2 10 -1 1.0 100 80 60 40 20 0 180 160 140 120 0 200 1000 800 600 400 200 0 25 20 10 5 0 15 10 -4 www.nellsemi.com 0.5 single pulse 0.1 0.3 0.7 0.05 peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note : d = 0.9 0.80 0.90 t = 175c j t = 125c j t = -55c j t = 25c j 60a 1.8 30a 15a t = 125c j v = 400v r 100 80 60 40 60 a 15 a 30 a t = 125c j v = 400v r 1200 60 a 30 a 15 a t = 125c j v = 400v r
n high power products ell semiconductor rohs rohs semiconductor rohs rohs page 4 of 5 N-HFA60PA60C 50 (pf) fig.7 maximum average forward current vs. case temperature 1 10 200 fig6. dynamic parameters vs. junction temperature junction temperature ( c),t j dynamic parameters, k f (normalized to 1000a/ s) case temperature ( c) l f(av) (a) fig.8 junction capacitance vs. reverse voltage reverse voltage (v), v r junction capacitance, c j 1.2 1.0 0.8 0.6 0.4 0.2 0.0 60 50 40 30 20 0 25 100 125 150 175 75 50 25 100 125 150 0 75 160 140 120 100 0 100 t rr q rr t rr 10 60 40 20 i rrm www.nellsemi.com q rr duty cycle = 0.5 t j = 175c 80 180 200
n high power products ell semiconductor rohs rohs semiconductor rohs rohs page 5 of 5 N-HFA60PA60C ordering information table 1 - fred family 2 - current rating ( 60 = 30 ) a, 30a x 2 3 - package outline pa to ( = -247, 3 pins) 4 - (60 = 600 ) voltage rating v 5 - ( = configuration c center tap common cathode) device code 3 1 2 hfa 60 pa 60 c 6 n 6 - nell semiconductors product - 4 5 www.nellsemi.com
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